ds30203 rev. 5 - 2 1 of 5 BSS138DW www.diodes.com diodes incorporated BSS138DW dual n-channel enhancement mode field effect transistor features low on-resistance low gate threshold voltage low input capacitance fast switching speed also available in lead free version characteristic symbol BSS138DW units drain-source voltage v dss 50 v drain-gate voltage (note 3) v dgr 50 v gate-source voltage continuous v gss 20 v drain current (note 1) continuous i d 200 ma total power dissipation (note 1) p d 200 mw thermal resistance, junction to ambient r ja 625 c/w operating and storage temperature range t j ,t stg -55 to +150 c mechanical data a m j l d b c h k g f s 1 d 2 g 1 d 1 s 2 g 2 electrical characteristics @ t a = 25 c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 2) drain-source breakdown voltage bv dss 50 75 v v gs = 0v, i d = 250 a zero gate voltage drain current i dss 0.5 a v ds = 50v, v gs = 0v gate-body leakage i gss 100 na v gs = 20v, v ds = 0v on characteristics (note 2) gate threshold voltage v gs(th) 0.5 1.2 1.5 v v ds =v gs , i d =-250 a static drain-source on-resistance r ds (on) 1.4 3.5 v gs = 10v, i d = 0.22a forward transconductance g fs 100 ms v ds =25v, i d = 0.2a, f = 1.0khz dynamic characteristics input capacitance c iss 50 pf v ds = 10v, v gs = 0v f = 1.0mhz output capacitance c oss 25 pf reverse transfer capacitance c rss 8.0 pf switching characteristics turn-on delay time t d(on) 20 ns v dd = 30v, i d = 0.2a, r gen = 50 turn-off delay time t d(off) 20 ns note: 1. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on diodes inc. suggested pad layout document ap02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. short duration test pulse used to minimize self-heating effect. 3. r gs 20k
s 1 d 1 d 2 s 2 g 1 g 2 sot-363 dim min max a 0.10 0.30 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal f 0.30 0.40 h 1.80 2.20 j 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.25 0 8 all dimensions in mm maximum ratings @ t a = 25 c unless otherwise specified case: sot-363, molded plastic case material - ul flammability rating 94v-0 moisture sensitivity: level 1 per j-std-020a terminals: solderable per mil-std-202, method 208 also available in lead free plating (matte tin finish). please see ordering information, note 5, on page 2 terminal connections: see diagram marking code (see page 2): k38 ordering & date code information: see page 2 weight: 0.006 grams (approx.)
ds30203 rev. 5 - 2 2 of 5 BSS138DW www.diodes.com ordering information (note 4) device packaging shipping BSS138DW-7 sot-363 3000/tape & reel marking information notes: 4. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 5. for lead free version (with lead free terminal finish) part number, please add "-f" suffix to part number above. example: BSS138DW-7-f. k38 k38 ym ym k38 = product type marking code ym = date code marking y = year ex: n = 2002 m = month ex: 9 = september date code key year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 code jklmnpr st u vw month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd 0 v , gate-source voltage (v) gs fi g . 2 transfer characteristics 0.1 0.2 0.3 0.5 0.4 0.6 0.7 0 . 8 0 1 1.5 0.5 2 3.5 4 4.5 2.5 3 i , drain-source current (a) d -55 c 150 c 25 c v = 1v ds 0 0.1 0.2 0.3 0.4 0.5 0 . 6 1 0 3 2 5 4 7 6 8 9 10 i , drain-source current (a) d v , drain-source voltage (v) ds fi g . 1 drain-source current vs. drain-source volta g e t = 25 c j v = 3.5v gs v = 3.25v gs v = 3.0v gs v = 2.75v gs v = 2.5v gs
ds30203 rev. 5 - 2 3 of 5 BSS138DW www.diodes.com 0 i , drain current (a) d fi g . 5 drain-source on resistance vs. drain current 1 2 3 4 5 6 7 8 0 0.02 0.04 0.06 0.08 0.16 0.14 0.12 0.1 r , drain-source on resistance ( w ) ds(on) 150 c -55 c 25 c v = 2.5v gs 0 0.2 0.4 0.6 0.8 1 1.4 1.2 2 1.8 1.6 -40 -55 5 -25 -10 50 20 35 80 95 65 110 125 140 v , gate threshold voltage (v) gs(th) t , junction temperature (c) j fi g . 4 gate threshold volta g e vs. junction temperature i = 1.0ma d 0.65 t , junction temperature (c) j fi g . 3 drain-source on resistance vs. junction temperature 0.85 1.05 1.25 1.65 1.45 1.85 2.05 2.25 2.45 -55 -5 45 95 145 r , normalized drain-source on resistance ( w ) ds(on) v = 10v gs v = 4.5v gs i = 0.5a d i = 0.075a d
ds30203 rev. 5 - 2 4 of 5 BSS138DW www.diodes.com 0 0.5 1 1.5 2 2.5 3 3 .5 0.05 0 0.15 0.1 0.25 0.2 0.35 0.3 0.4 0.45 0.5 i , drain current (a) d fi g . 8 drain-source on resistance vs. drain current 150 c -55 c 25 c v = 10v gs 0 1 2 3 4 5 6 0.05 0 0.15 0.1 0.25 0.2 0.35 0.3 0.4 0.45 0.5 v , drain-source voltage (v) ds fi g . 7 drain-source on resistance vs. drain current 150 c -55 c 25 c v = 4.5v gs 0 i , drain current (a) d fi g . 6 drain-source on resistance vs. drain current 1 2 3 5 4 6 7 8 9 0 0.05 0.1 0.2 0.15 0.25 150 c -55 c 25 c v = 2.75v gs
ds30203 rev. 5 - 2 5 of 5 BSS138DW www.diodes.com c, capacitance (pf) 1 10 100 v , drain source voltage (v) ds fi g . 10 capacitance vs. drain source volta g e 0 5 10 15 20 25 30 v=0v gs f = 1mhz c rss c oss c iss i,di o de current (a) d 0.001 0.01 0.1 1 v , diode forward voltage (v) sd fig. 9 body diode current vs. body diode voltage 0 0.2 0.4 0.6 0.8 1 1. 2 150 c -55 c 25 c
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